Dispositifs electroluminescents fabriqués sur du GaN dopé d'Erbium

ITO = Indium tin oxide

" The GaN film was grown by molecular beam epitaxy using solid sources for Ga (Gallium) and Er (Erbium) and a plasma source for N2 (Diazote). " (abstract)

Electroluminescent Devices Fabricated on Erbium Doped GaN, Michael James Garter, University of Cincinnati, 2001